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document number: 93685 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 fast thyristor/diode and thyristor/thyristor (magn-a-pak power modules), 180 a vsk.f180..p series vishay semiconductors features ? fast turn-off thyristor ? fast recovery diode ? high surge capability ? electrically isolated baseplate ? 3000 v rms isolating voltage ? industrial standard package ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec description these series of magn-a-pak modules are intended for applications such as self -commutated inverters, dc choppers, electronic welders, induction heating and others where fast switching characteristics are required. electrical specifications product summary i t(av) 180 a type modules - thyristor, fast ma g n-a-pak major ratings and characteristics symbol characteristics values units i t(av) 180 a t c 85 c i t(rms) 400 a i tsm 50 hz 7130 60 hz 7470 i 2 t 50 hz 255 ka 2 s 60 hz 232 i 2 ? t 2550 ka 2 ? s t q 20/25 s t rr 2 v drm /v rrm 800/1200 v t j range - 40 to 125 c voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm maximum at t j = 125 c ma vsk.f180- 08 800 800 50 12 1200 1200
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93685 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-jul-10 vsk.f180..p series vishay semiconductors fast thyristor/diode and thyristor/thyristor (magn-a-pak power modules), 180 a current carrying capability frequency units 50 hz 370 530 565 800 2400 3150 a 400 hz 435 650 670 1000 1540 2050 2500 hz 290 430 490 720 610 830 5000 hz 240 345 390 540 390 540 10 000 hz 170 270 290 390 - - recovery voltage v r 50 50 50 v voltage before turn-on v d 80 % v drm 80 % v drm 80 % v drm rise of on-state cu rrent dl/dt 50 - - a/s case temperature 856085608560c equivalent values for rc circuit 10/0.47 10/0.47 10/0.47 ? /f on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 180 a 85 c maximum rms current i t(rms) as ac switch 400 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal ha lf wave, initial t j = t j maximum 7130 t = 8.3 ms 7470 t = 10 ms 100 % v rrm reapplied 6000 t = 8.3 ms 6280 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 255 ka 2 s t = 8.3 ms 232 t = 10 ms 100 % v rrm reapplied 180 t = 8.3 ms 164 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 2550 ka 2 ? s low level value or threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.30 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.38 low level value on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.90 m ? high level value on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.71 maximum on-state voltage drop v tm i pk = 600 a, t j = t j maximum, t p = 10 ms sine pulse 1.84 v maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latching current i l t j = 25 c, v a = 12 v, ra = 6 ? , i g = 1a 1000 180 el i tm 180 el i tm 100 s i tm
document number: 93685 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vsk.f180..p series fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 180 a vishay semiconductors switching parameter symbol test conditions values units kj maximum non-repetitive rate of rise di/dt gate drive 20 v, 20 ? , t r ? 1 ms, v d = 80 % v drm t j = 25 c 800 a/s maximum recovery time t rr i tm = 350 a, di/dt = - 25 a/s, v r = 50 v, t j = 25 c 2 s maximum turn-off time t q i tm = 750 a; t j = 125 c; di/dt = - 25 a/s; v r = 50 v; dv/dt = 400 v/s linear to 80 % v drm 20 25 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = 125 c, exponential to 67 % v drm 1000 v/s rms insulation voltage v ins 50 hz, circuit to base, all term inals shorted, 25 c, 1 s 3000 v maximum peak reverse and off-state leakage current i rrm , i drm t j = 125 c, rated v drm /v rrm applied 50 ma triggering parameter symbol test conditions values units maximum peak gate power p gm f = 50 hz, d% = 50 60 w maximum peak average gate power p g(av) t j = 125 c, f = 50 hz, d% = 50 10 maximum peak positi ve gate current i gm t j = 125 c, t p ? 5 ms 10 a maximum peak negative gate voltage - v gm 5v maximum dc gate curren t required to trigger i gt t j = 25 c, v ak 12 v, ra = 6 ? 200 ma dc gate voltage required to trigger v gt 3v dc gate current not to trigger i gd t j = 125 c, rated v drm applied 20 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.125 k/w maximuml thermal resistance, case to heatsink per module r thcs mounting surface, flat and greased 0.02 mounting torque 10 % map to heatsink a mounting compound is recommended. the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. use of cable lugs is not recommended, busbar should be used and restrained during tigh tening. threads must be lubricated with a compound. 4 to 6 (35 to 53) n m (lbf in) busbar to map approximate weight 500 g 17.8 oz. case style magn-a-pak
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93685 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-jul-10 vsk.f180..p series vishay semiconductors fast thyristor/diode and thyristor/thyristor (magn-a-pak power modules), 180 a note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics ? r thjc conduction conductions angle sinusoidal conduction rectangular conduction test conditions units 180 0.009 0.006 t j = 125 c k/w 120 0.010 0.011 90 0.014 0.015 60 0.020 0.020 30 0.032 0.033 60 70 80 90 100 110 120 130 0 40 80 120 160 200 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle vsk.f180.. series r (dc) = 0.125 k/w thjc 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.f180.. series r (dc) = 0.125 k/w thjc 0 50 100 150 200 250 300 350 0 20 40 60 80 100120140160180 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 vsk.f180.. series per junction t = 1 25 c j 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) vsk.f180.. series per junction t = 12 5 c j
document number: 93685 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vsk.f180..p series fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 180 a vishay semiconductors fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non- repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics fig. 9 - reverse recovery charge characteristics fig. 10 - reverse recovery current characteristics 3000 3500 4000 4500 5000 5500 6000 6500 0 0 1 0 1 1 number of equal amplitude half cycle current pulses (n) peak half sine w ave on-state current (a) vsk.f180.. series per junction in itial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and w ith rate d v a p plie d fo llo w ing surg e . rrm j 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 1 1 . 0 1 0 . 0 peak half sine w ave o n-state c urrent (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. vsk.f180.. series per junction in itial t = 125 c no voltage reapplied rated v reapplied rrm j 100 1000 10000 1234567 t = 25 c j instantaneous on-state current (a) in stan tan e o us o n -state v oltag e (v) t = 12 5 c j vsk.f180.. series per junction 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 square wave pulse duration (s) thjc vsk.f180.. series per junction steady state value: r = 0.125 k/w (dc operation) transient thermal im pedance z (k/w ) thjc 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 300 a 200 a 100 a 500 a m aximum re verse rec overy charge - q rr (c) rate of fall of forward current - di/dt (a/s) vsk.f 180.. se ries t = 125 c i = 1000 a j tm 20 40 60 80 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 500a 300a 200a 100a m axim um reverse recovery current - irr (a) rate of fall of forward current - di/dt (a/s) vsk.f180.. series t = 125 c i = 1000a j tm
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93685 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-jul-10 vsk.f180..p series vishay semiconductors fast thyristor/diode and thyristor/thyristor (magn-a-pak power modules), 180 a fig. 11 - frequency characteristics fig. 12 - frequency characteristics fig. 13 - frequency characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 1000 5000 150 2500 peak on-state current (a) pulse basewidth (s) snubber circuit r = 10 ohms c = 0.47 f v = 80% v tp 1e4 sinusoida l pulse drm s s d vsk .f1 80.. se rie s t = 85 c c 1e1 1e2 1e3 1e4 50 hz 400 1000 5000 150 2500 pulse basewidth (s) sinusoidal pulse t = 60 c snubb er circuit r = 10 ohm s c = 0.47 f v = 80% v 1e1 tp c drm s s d vsk .f 180.. serie s 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 1000 5000 150 2500 snubber circuit r = 10 ohms c = 0.47 f v = 80% v peak on-state current (a) pulse basewidth (s) tp 1e4 vsk.f180.. series drm s s d tra p ezo id a l p ulse t = 8 5 c d i/d t 50a /s c e1 1e2 1e3 1e4 50 hz 400 1000 5000 150 2500 snubber circuit r = 10 ohms c = 0.47 f v = 80% v pulse basewidth (s) tp 1e1 drm s s d vsk.f180.. series tra p ezoida l p ulse t = 85 c di/dt 100a/s c 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 1000 5000 150 2500 peak on-state current (a) pulse basewidth (s) snubber circuit r = 10 ohms c = 0.47 f v = 80% v tp 1e4 vsk .f1 80.. se rie s tra pezoida l p ulse t = 60 c di/dt 50a/s c s s d drm 1e1 1e2 1e3 1e4 50 hz 400 1000 5000 150 2500 pulse basewidth (s) vsk.f180.. series trapezoidal pulse t = 60 c d i/d t 100a /s snubber circuit r = 10 ohms c = 0.47 f v = 80% v tp drm c s s d
document number: 93685 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 vsk.f180..p series fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 180 a vishay semiconductors fig. 14 - maximum on-state ener gy power loss characteristics fig. 15 - gate characteristics 1e1 1e2 1e3 1e4 1e11e21e31e4 10 joules per pulse 2.5 1 0.5 0.25 0.1 0.05 vsk.f180.. series sinusoidal pulse peak on-state current (a) pulse basewidth (s) tp 1e4 5 e1 1e2 1e3 1e4 10 joules per pulse 5 2.5 1 0.5 0.25 0.1 0.05 pulse basewidth (s) vsk.f180.. series trapezoidal pulse di/dt 50a/s tp 1e1 0.1 1 10 100 0 0 1 0 1 1 1 . 0 1 0 . 0 vgd igd (b) (a) tj=25 c tj=125 c tj= -4 0 c (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rectangular gate pulse rated di/dt : 10v , 10ohm s <= 30% rated di/dt : 10v, 20ohm s (1) pgm = 8w , tp = 25ms (2) pgm = 20w, tp = 1ms (3) pgm = 40w, tp = 5ms (4) pgm = 80w, tp = 2.5ms vsk.f180.. series frequency lim ited by pg (av) (1) (4)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93685 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-jul-10 vsk.f180..p series vishay semiconductors fast thyristor/diode and thyristor/thyristor (magn-a-pak power modules), 180 a ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration circuit description circuit configuration code circuit drawing two scrs common cathodes u scr/diode common cathodes k two scrs common anodes v 1 - module type 2 - circuit configuration (see circuit configuration table) 3 - fast scr 5 - voltage code x 100 = v rrm (see voltage ratings table) 4 - current rating: i t(av) x 10 rounded 6 - dv/dt code: h 400 v/s 7 -t q code: k 20 s j 25 s 8 - p = lead (pb)-free device code 5 1 3 24 678 vsk t f 180 - 12 h k p v s kuf.. + -- k1 g 1 g 2 k2 - - + v s kkf.. + -- g 2 k2 -- + v s kvf.. - ++ k1 g 1 g 2 k2 ++ -
document number: 93685 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 9 vsk.f180..p series fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 180 a vishay semiconductors scr/diode common anodes n scr/diode doubler circui t, negative control l two scrs doubler circuit t scr/diode doubler circui t, positive control h links to related documents dimensions www.vishay.com/doc?95086 circuit configuration circuit description circuit configuration code circuit drawing v s knf.. - k1 g 1 ++ + + - v s klf.. g 2 k2 ~ +- +- ~ v s ktf.. +- ~ ~ +- k1 g 1 g 2 k2 v s khf.. ~ +- k1 g 1 +- ~
document number: 95086 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-aug-07 1 magn-a-pak outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensions are nominal ? full engineering drawings are available on request ? ul identification number for ga te and cathode wire: ul 1385 ? ul identification number for package: ul 94 v-0 ? 5.5 6 (0.24) 38 (1.5) 50 (1.97) 6 (0.24) 115 (4.53) 80 (3.15) 9 (0.35) 20 (0.79) 3 screws m8 x 1.25 35 (1.38) 28 (1.12) 32 (1.26) hex 13 10 (0.39) 92 (3.62) 51 (2.01) 52 (2.04)
legal disclaimer notice www.vishay.com vishay revision: 12-mar-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products no t expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale , including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding th e design or manufacture of the part. please contact authorized vishay personnel t o obtain written terms and conditions regardin g products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu.

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